Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film

Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a p...

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Main Author:	Abidin, Noor Rehan Zainal
Format:	Thesis
Language:	English
Published:	2011
Subjects:	TN1-997 Mining engineering Metallurgy
Online Access:	http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf
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id	my-usm-ep.42216
record_format	uketd_dc
spelling	my-usm-ep.422162019-04-12T05:26:39Z Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film 2011-01 Abidin, Noor Rehan Zainal TN1-997 Mining engineering. Metallurgy Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate. 2011-01 Thesis http://eprints.usm.my/42216/ http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuteraan Bahan & Sumber Mineral
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	TN1-997 Mining engineering Metallurgy
spellingShingle	TN1-997 Mining engineering Metallurgy Abidin, Noor Rehan Zainal Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
description	Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate.
format	Thesis
qualification_level	Master's degree
author	Abidin, Noor Rehan Zainal
author_facet	Abidin, Noor Rehan Zainal
author_sort	Abidin, Noor Rehan Zainal
title	Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
title_short	Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
title_full	Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
title_fullStr	Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
title_full_unstemmed	Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
title_sort	anodization of zirconium for the formation of high-k dielectric zirconia (zro2) thin film
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Kejuteraan Bahan & Sumber Mineral
publishDate	2011
url	http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf
_version_	1747821035924750336

Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film

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