Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film

Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a p...

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Bibliographic Details
Main Author: Abidin, Noor Rehan Zainal
Format: Thesis
Published: 2011
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