Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a p...
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| 格式: | Thesis |
| 語言: | English |
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2011
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| 在線閱讀: | http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf |
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