Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film
Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a p...
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my-usm-ep.422162019-04-12T05:26:39Z Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film 2011-01 Abidin, Noor Rehan Zainal TN1-997 Mining engineering. Metallurgy Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate. 2011-01 Thesis http://eprints.usm.my/42216/ http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf application/pdf en public masters Universiti Sains Malaysia Pusat Pengajian Kejuteraan Bahan & Sumber Mineral |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
TN1-997 Mining engineering Metallurgy |
| spellingShingle |
TN1-997 Mining engineering Metallurgy Abidin, Noor Rehan Zainal Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| description |
Zirconia (ZrO2) is a promising material for future high-k gate dielectric applications. With the decreasing of the get dielectric thickness (<1.4nm), silicon dioxide (SiO2) layer suffered from basic problem of high tunneling leakage current due to its low dielectric constant (k=3.9). ZrO2 has a potential to overcome the tunneling leakage current problem since it has a high dielectric current (k=25) and good thermal stability on silicon (Si) substrate. The main objective of this work is to produce ZrO2 thin film with good properties and suitable for get dielectric application. ZrO2 thin film has been produced by anodizing zirconium (Zr) thin film sputtered on n-type Si substrate. |
| format |
Thesis |
| qualification_level |
Master's degree |
| author |
Abidin, Noor Rehan Zainal |
| author_facet |
Abidin, Noor Rehan Zainal |
| author_sort |
Abidin, Noor Rehan Zainal |
| title |
Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_short |
Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_full |
Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_fullStr |
Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_full_unstemmed |
Anodization Of Zirconium For The Formation Of High-K Dielectric Zirconia (Zro2) Thin Film |
| title_sort |
anodization of zirconium for the formation of high-k dielectric zirconia (zro2) thin film |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Pusat Pengajian Kejuteraan Bahan & Sumber Mineral |
| publishDate |
2011 |
| url |
http://eprints.usm.my/42216/1/NOOR_REHAN_ZAINAL_ABIDIN.pdf |
| _version_ |
1747821035924750336 |