Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films

InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic app...

Full description

Saved in:
Bibliographic Details
Main Author: Ganie, Umar Bashir
Format: Thesis
Language:English
Published: 2018
Subjects:
Online Access:http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!