Structural, Electrical, And Optical Properties Of Indium Nitride Thin Films
InN is the least studied material among III-V nitrides, due to the challenges associated with its low dissociation temperature and lack of suitable substrate. The discovery of a narrow band gap (0.7 eV) renewed the interest of researchers to carry out the detailed study of InN for optoelectronic app...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
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2018
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| 在線閱讀: | http://eprints.usm.my/44275/1/UMAR%20BASHIR%20GANIE.pdf |
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