Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application

In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of I...

Full description

Saved in:

Bibliographic Details
Main Author:	Afzal, Naveed
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my-usm-ep.45432
record_format	uketd_dc
spelling	my-usm-ep.454322019-09-17T02:42:07Z Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application 2017-02 Afzal, Naveed QC1-999 Physics In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy. 2017-02 Thesis http://eprints.usm.my/45432/ http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Pusat Pengajian Sains Fizik
institution	Universiti Sains Malaysia
collection	USM Institutional Repository
language	English
topic	QC1-999 Physics
spellingShingle	QC1-999 Physics Afzal, Naveed Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
description	In this work, growth of indium aluminum nitride (InAlN) film was studied on different substrates by using reactive magnetron co-sputtering technique. The study was mainly focused to grow In-rich InAlN film on p-type Si (111) substrate with improved physical properties. The structural properties of InAlN were investigated through X-ray diffraction (XRD) analysis, surface properties were studied through field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) whereas the electrical properties were examined by taking Hall measurements and current-voltage (I-V) characteristics of the films. The band gap of InAlN was estimated through UV-Vis reflectance spectroscopy.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Afzal, Naveed
author_facet	Afzal, Naveed
author_sort	Afzal, Naveed
title	Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_short	Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_full	Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_fullStr	Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_full_unstemmed	Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application
title_sort	fabrication and characterizations of magnetron co-sputtered inain films for photodetectors application
granting_institution	Universiti Sains Malaysia
granting_department	Pusat Pengajian Sains Fizik
publishDate	2017
url	http://eprints.usm.my/45432/1/NAVEED%20AFZAL.pdf
_version_	1747821510109691904

Fabrication And Characterizations Of Magnetron Co-Sputtered InAIN Films For Photodetectors Application

Similar Items