Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...

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Bibliographic Details
Main Author: Kamarulzaman, Azharul Ariff
Format: Thesis
Published: 2017
Online Access:http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf
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