Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector

This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...

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Main Author: Kamarulzaman, Azharul Ariff
Format: Thesis
Language:English
Published: 2017
Subjects:
Online Access:http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf
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spelling my-usm-ep.477912020-10-27T07:47:19Z Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector 2017-12 Kamarulzaman, Azharul Ariff QC501-766 Electricity and magnetism This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment. 2017-12 Thesis http://eprints.usm.my/47791/ http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelektronics Research and Technology (INOR))
institution Universiti Sains Malaysia
collection USM Institutional Repository
language English
topic QC501-766 Electricity and magnetism
spellingShingle QC501-766 Electricity and magnetism
Kamarulzaman, Azharul Ariff
Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
description This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment.
format Thesis
qualification_name Doctor of Philosophy (PhD.)
qualification_level Doctorate
author Kamarulzaman, Azharul Ariff
author_facet Kamarulzaman, Azharul Ariff
author_sort Kamarulzaman, Azharul Ariff
title Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_short Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_full Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_fullStr Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_full_unstemmed Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
title_sort polycrystalline gan layer on m-plane sapphire substrate for metal-semiconductor-metal photodetector
granting_institution Universiti Sains Malaysia
granting_department Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelektronics Research and Technology (INOR))
publishDate 2017
url http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf
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