Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
محفوظ في:
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| التنسيق: | أطروحة |
| اللغة: | English |
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2017
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| الوصول للمادة أونلاين: | http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf |
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my-usm-ep.477912020-10-27T07:47:19Z Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector 2017-12 Kamarulzaman, Azharul Ariff QC501-766 Electricity and magnetism This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment. 2017-12 Thesis http://eprints.usm.my/47791/ http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf application/pdf en public phd doctoral Universiti Sains Malaysia Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelektronics Research and Technology (INOR)) |
| institution |
Universiti Sains Malaysia |
| collection |
USM Institutional Repository |
| language |
English |
| topic |
QC501-766 Electricity and magnetism |
| spellingShingle |
QC501-766 Electricity and magnetism Kamarulzaman, Azharul Ariff Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| description |
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work was then extended to develop metal-semiconductor-metal (MSM) photodetector using the most possible metal/metal oxide contact, to increase the efficiency of the device. The initial part of this thesis focus on ameliorating the properties of the polycrystalline GaN layer by controlling gas ambient, time, temperature, and gas flow rate of the annealing treatment. |
| format |
Thesis |
| qualification_name |
Doctor of Philosophy (PhD.) |
| qualification_level |
Doctorate |
| author |
Kamarulzaman, Azharul Ariff |
| author_facet |
Kamarulzaman, Azharul Ariff |
| author_sort |
Kamarulzaman, Azharul Ariff |
| title |
Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_short |
Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_full |
Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_fullStr |
Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_full_unstemmed |
Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector |
| title_sort |
polycrystalline gan layer on m-plane sapphire substrate for metal-semiconductor-metal photodetector |
| granting_institution |
Universiti Sains Malaysia |
| granting_department |
Institut Penyelidikan dan Teknologi Nano Optoelektronik (Institute of Nano Optoelektronics Research and Technology (INOR)) |
| publishDate |
2017 |
| url |
http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf |
| _version_ |
1747821830698172416 |