Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

Epitaxial Growth Of Iii-V Nitrides Based Light Emitting Diodes By Metal Organic Chemical Vapor Deposition

This research aims to improve the performance of indium gallium nitride (InGaN) based LEDs and to demonstrate a working aluminum gallium nitride (AlGaN) based LEDs through metal organic chemical vapour deposition epitaxy. The effect of gallium nitride (GaN) nucleation growth temperature, superlattic...

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書目詳細資料
主要作者:	Samsudin, Muhammad Esmed Alif
格式:	Thesis
語言:	English
出版:	2023
主題:	QC1 Physics (General)
在線閱讀:	http://eprints.usm.my/61291/1/24%20Pages%20from%20MUHAMMAD%20ESMED%20ALIF%20BIN%20SAMSUDIN.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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