Band anti-crossing modelling and characterization of multi quantum well gainnas for photovoltaic application

A recent study of Ga0.952In0.048N0.016As0.984 /GaAs multi-quantum-well (MQW) p-i-n diode has reported that it is able to operate in near-infrared applications (800-1100nm). Nevertheless, there is no elucidations on the effect of indium (In) and nitrogen (N) fractions on electronic band transition, t...

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Bibliographic Details
Main Author: Abd Samad, Muhammad Izzuddin
Format: Thesis
Language:English
English
English
Published: 2021
Subjects:
Online Access:http://eprints.uthm.edu.my/1021/1/24p%20MUHAMMAD%20IZZUDDIN%20BIN%20ABD%20SAMAD.pdf
http://eprints.uthm.edu.my/1021/2/MUHAMMAD%20IZZUDDIN%20BIN%20ABD%20SAMAD%20COPYRIGHT%20DECLARATION.pdf
http://eprints.uthm.edu.my/1021/3/MUHAMMAD%20IZZUDDIN%20BIN%20ABD%20SAMAD%20WATERMARK.pdf
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