A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
The Double-Gate and Gate-all-Around are said to be the promising candidates to pursue Complementary-Metal-Oxide Semiconductor scaling. When the device is scaled down, several problems arise such as the short-channel effect, excessive transistor gate leakage and power consumption. The purpose o...
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| 格式: | Thesis |
| 語言: | English English English |
| 出版: |
2020
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| 主題: | |
| 在線閱讀: | http://eprints.uthm.edu.my/1051/1/24p%20NOR%20FAREZA%20KOSMANI.pdf http://eprints.uthm.edu.my/1051/3/NOR%20FAREZA%20KOSMANI%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/1051/2/NOR%20FAREZA%20KOSMANI%20WATERMARK.pdf |
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