Simulation, fabrication and characterization of NMOS transistor

This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different cha...

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Main Author:	Rifai, Damhuji
Format:	Thesis
Language:	English English English
Published:	2006
Subjects:	TK7800-8360 Electronics
Online Access:	http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf
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id	my-uthm-ep.2223
record_format	uketd_dc
spelling	my-uthm-ep.22232021-10-31T04:35:06Z Simulation, fabrication and characterization of NMOS transistor 2006-12 Rifai, Damhuji TK7800-8360 Electronics This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different channel length and oxide gate for the Long Channel NMOS transistor too has been investigated. The data from the experiment conducted have shown that the threshold voltage is more influenced by the thickness of the oxide gate as compared with the channel length. The threshold voltage increased in linear form with the increase of the oxide gate thickness; and there is almost no change for different channel length. Leakage Current reduces exponentially with the increase of the oxide gate thickness and the channel length. 2006-12 Thesis http://eprints.uthm.edu.my/2223/ http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf text en staffonly http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf text en public http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Faculty of Electrical and Electronic Engineering
institution	Universiti Tun Hussein Onn Malaysia
collection	UTHM Institutional Repository
language	English English English
topic	TK7800-8360 Electronics
spellingShingle	TK7800-8360 Electronics Rifai, Damhuji Simulation, fabrication and characterization of NMOS transistor
description	This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different channel length and oxide gate for the Long Channel NMOS transistor too has been investigated. The data from the experiment conducted have shown that the threshold voltage is more influenced by the thickness of the oxide gate as compared with the channel length. The threshold voltage increased in linear form with the increase of the oxide gate thickness; and there is almost no change for different channel length. Leakage Current reduces exponentially with the increase of the oxide gate thickness and the channel length.
format	Thesis
qualification_name	Master of Philosophy (M.Phil.)
qualification_level	Master's degree
author	Rifai, Damhuji
author_facet	Rifai, Damhuji
author_sort	Rifai, Damhuji
title	Simulation, fabrication and characterization of NMOS transistor
title_short	Simulation, fabrication and characterization of NMOS transistor
title_full	Simulation, fabrication and characterization of NMOS transistor
title_fullStr	Simulation, fabrication and characterization of NMOS transistor
title_full_unstemmed	Simulation, fabrication and characterization of NMOS transistor
title_sort	simulation, fabrication and characterization of nmos transistor
granting_institution	Universiti Tun Hussein Onn Malaysia
granting_department	Faculty of Electrical and Electronic Engineering
publishDate	2006
url	http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf
_version_	1747830926980677632

Simulation, fabrication and characterization of NMOS transistor

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