Simulation, fabrication and characterization of NMOS transistor
This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different cha...
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| 語言: | English English English |
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2006
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| 在線閱讀: | http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf |
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my-uthm-ep.22232021-10-31T04:35:06Z Simulation, fabrication and characterization of NMOS transistor 2006-12 Rifai, Damhuji TK7800-8360 Electronics This thesis explains the recipe module development for the first Long Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different channel length and oxide gate for the Long Channel NMOS transistor too has been investigated. The data from the experiment conducted have shown that the threshold voltage is more influenced by the thickness of the oxide gate as compared with the channel length. The threshold voltage increased in linear form with the increase of the oxide gate thickness; and there is almost no change for different channel length. Leakage Current reduces exponentially with the increase of the oxide gate thickness and the channel length. 2006-12 Thesis http://eprints.uthm.edu.my/2223/ http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf text en staffonly http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf text en public http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf text en validuser mphil masters Universiti Tun Hussein Onn Malaysia Faculty of Electrical and Electronic Engineering |
| institution |
Universiti Tun Hussein Onn Malaysia |
| collection |
UTHM Institutional Repository |
| language |
English English English |
| topic |
TK7800-8360 Electronics |
| spellingShingle |
TK7800-8360 Electronics Rifai, Damhuji Simulation, fabrication and characterization of NMOS transistor |
| description |
This thesis explains the recipe module development for the first Long
Channel NMOS transistor device fabrication process at cleanroom laboratory of KUiTTHO. A recipe for the NMOS transistor fabrication process has been successfully produced. Threshold Voltage and Leakage Current, with different channel length and oxide gate for the Long Channel NMOS transistor too has been investigated. The data from the experiment conducted have shown that the threshold voltage is more influenced by the thickness of the oxide gate as compared with the
channel length. The threshold voltage increased in linear form with the increase of the oxide gate thickness; and there is almost no change for different channel length. Leakage Current reduces exponentially with the increase of the oxide gate thickness and the channel length. |
| format |
Thesis |
| qualification_name |
Master of Philosophy (M.Phil.) |
| qualification_level |
Master's degree |
| author |
Rifai, Damhuji |
| author_facet |
Rifai, Damhuji |
| author_sort |
Rifai, Damhuji |
| title |
Simulation, fabrication and characterization of NMOS transistor |
| title_short |
Simulation, fabrication and characterization of NMOS transistor |
| title_full |
Simulation, fabrication and characterization of NMOS transistor |
| title_fullStr |
Simulation, fabrication and characterization of NMOS transistor |
| title_full_unstemmed |
Simulation, fabrication and characterization of NMOS transistor |
| title_sort |
simulation, fabrication and characterization of nmos transistor |
| granting_institution |
Universiti Tun Hussein Onn Malaysia |
| granting_department |
Faculty of Electrical and Electronic Engineering |
| publishDate |
2006 |
| url |
http://eprints.uthm.edu.my/2223/1/DAMHUJI%20B.%20RIFAI%20-%20declaration.pdf http://eprints.uthm.edu.my/2223/2/DAMHUJI%20B.%20RIFAI%20-%2024p.pdf http://eprints.uthm.edu.my/2223/3/DAMHUJI%20B.%20RIFAI%20-%20fulltext.pdf |
| _version_ |
1747830926980677632 |