Aluminium nitride (AlN) as buffer layer for deposition of gallium nitride (GaN) thin films on silicon substrates using magnetron sputtering technique
Group III-nitrides semiconductors composed of gallium nitride (GaN), Indium nitride (InN), and aluminium nitride (AlN) had found use in broad technologies especially in optoelectronic and power devices. The main issues that limit the performance of GaN-based ultraviolet light-emitting diodes (UV-LED...
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| 格式: | Thesis |
| 语言: | English English English |
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2021
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| 在线阅读: | http://eprints.uthm.edu.my/989/1/24p%20MULIANA%20BINTI%20TAHAN.pdf http://eprints.uthm.edu.my/989/2/MULIANA%20BINTI%20TAHAN%20COPYRIGHT%20DECLARATION.pdf http://eprints.uthm.edu.my/989/3/MULIANA%20BINTI%20TAHAN%20WATERMARK.pdf |
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