Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
This study presents the synthesis of Silicon Carbide Quantum Dots (SiC QDs) by Very High Frequency-Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) method. Si (100) was used as a substrate where the growth was performed at a much lower temperature (100°C) than previous work. Besides, the growt...
Saved in:
Main Author: | Jusoh, Haezah Munyati |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2020
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/101977/1/HaezahMunyatiJusohMFS2020.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
by: Abd. Karim, Nur Farah Nadia
Published: (2019) -
Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition
by: Omar, Muhammad Firdaus
Published: (2016) -
Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques
by: Azali, Muhamad Muizzudin
Published: (2022) -
Structural and optical properties of silicon/silicon carbide nanowires grown by hot-wire chemical vapour deposition /
by: Nurul Jannah Mohd Noor
Published: (2014) -
Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
by: Rosman, Nor Hariz Kadir
Published: (2020)