Variable oxide thickness optimization and reliability analysis of Gate-All-Around floating gate for flash memory cell
Gate-All-Around (GAA) transistor is one of the excellent devices that has been utilized for flash memory applications owing to its gate coupling which led to a higher gate electrostatic control, cheaper manufacturing cost and bigger data storage. However, GAA structure with floating gate memory cell...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2020
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/102451/1/FarahAHamidMSKE2020.pdf |
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