Optimization of vhf-pecvd deposition parameters for silicon carbide film using in-situ and in-line gas phase analysis

In this study, the feasibility of using very high frequency (100 MHz to 200 MHz) Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) technique to deposit crystalline silicon carbide (SiC) thin films was investigated. High quality crystalline SiC film is very challenging to be produced since high...

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Bibliographic Details
Main Author: Azali, Muhamad Muizzudin
Format: Thesis
Published: 2022
Online Access:http://eprints.utm.my/102659/1/MuhamadMuizzudinAzaliMFS2022.pdf.pdf
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