Design, fabrication and characterization of capacitively coupled gallium arsenide-based interdigitalgated plasma devices
In the recent years, solid-state terahertz (THz) devices to fill the so-called “THz” gap have become a hot topic. Since the transit-time effect is so severe in this frequency range for conventional devices, one possibility is to utilize traveling wave interaction in semiconductor plasma. The theoret...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2010
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| Online Access: | http://eprints.utm.my/id/eprint/12673/1/ZonFazLilaMohdMFKE2010.pdf |
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