A pH sensor using Gallium Nitide based semiconductor with gateless field effect transistor type structure
GaN-based wide bandgap semiconductors have become one of the most extensively studied materials and rapid progress has been demonstrated in both optical and electronic devices. Due to their wide bandgap, good thermal and chemical stability, GaN-based semiconductor materials are also very promising f...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/18326/1/MasturaShafinazZainalMFKE2009.pdf |
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