Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser

The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize th...

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Main Author:	Ahmed Alegaily, Fatouma Millad
Format:	Thesis
Language:	English
Published:	2012
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/33741/2/FatoumaMilladAhmedAlegailyMFS2012.pdf
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id	my-utm-ep.33741
record_format	uketd_dc
spelling	my-utm-ep.337412018-04-27T01:26:45Z Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser 2012-07 Ahmed Alegaily, Fatouma Millad QC Physics The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize the doped silicon thin film (STF) with copper. A silicon thin film was prepared via low pressure physical vapor deposition (PVD). The STF was annealed by two techniques, first by using conventional method via tube furnace, second by using Q-switched Nd:YAG laser annealing. The microstructure of thin film was analyzed using Atomic Force Microscope (AFM). The results showed that, the grain size of the copper film increased with the energy density of the Nd:YAG laser. However, the grain size was found to reduce after exceeding the critical energy. The large grain size obtained for copper silicon thin film was 2426.04 nm at the corresponding energy density of 3989.48 mJ/cm-2. 2012-07 Thesis http://eprints.utm.my/id/eprint/33741/ http://eprints.utm.my/id/eprint/33741/2/FatoumaMilladAhmedAlegailyMFS2012.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:70528?site_name=Restricted Repository masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Ahmed Alegaily, Fatouma Millad Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
description	The polycrystalline thin copper films on semiconductor substrates are of interest for many semiconductor devices. Hence the aim of this research is to recrystallize copper silicon thin film. In order to achieve this objective, the Q-switched Nd:YAG laser was employed as a source to re-crystallize the doped silicon thin film (STF) with copper. A silicon thin film was prepared via low pressure physical vapor deposition (PVD). The STF was annealed by two techniques, first by using conventional method via tube furnace, second by using Q-switched Nd:YAG laser annealing. The microstructure of thin film was analyzed using Atomic Force Microscope (AFM). The results showed that, the grain size of the copper film increased with the energy density of the Nd:YAG laser. However, the grain size was found to reduce after exceeding the critical energy. The large grain size obtained for copper silicon thin film was 2426.04 nm at the corresponding energy density of 3989.48 mJ/cm-2.
format	Thesis
qualification_level	Master's degree
author	Ahmed Alegaily, Fatouma Millad
author_facet	Ahmed Alegaily, Fatouma Millad
author_sort	Ahmed Alegaily, Fatouma Millad
title	Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
title_short	Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
title_full	Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
title_fullStr	Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
title_full_unstemmed	Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
title_sort	re-crystallization of metallized silicon wafer with copper film by q-switched nd : yag laser
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2012
url	http://eprints.utm.my/id/eprint/33741/2/FatoumaMilladAhmedAlegailyMFS2012.pdf
_version_	1747816173772210176

Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser

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