Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor

In recent development of nanoelectronic devices, strained silicon Metal- Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising structure for the future nanoscale device. Strained silicon is an attractive option due to the enhanced carrier mobility, high field veloci...

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Bibliographic Details
Main Author: Kang, Eng Siew
Format: Thesis
Language:English
Published: 2013
Subjects:
Online Access:http://eprints.utm.my/id/eprint/33828/5/KangEngSiewPFKE2013.pdf
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