Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
In recent development of nanoelectronic devices, strained silicon Metal- Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising structure for the future nanoscale device. Strained silicon is an attractive option due to the enhanced carrier mobility, high field veloci...
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| Format: | Thesis |
| Language: | English |
| Published: |
2013
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| Online Access: | http://eprints.utm.my/id/eprint/33828/5/KangEngSiewPFKE2013.pdf |
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