Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor

In recent development of nanoelectronic devices, strained silicon Metal- Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising structure for the future nanoscale device. Strained silicon is an attractive option due to the enhanced carrier mobility, high field veloci...

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Main Author:	Kang, Eng Siew
Format:	Thesis
Language:	English
Published:	2013
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/33828/5/KangEngSiewPFKE2013.pdf
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spelling	my-utm-ep.338282017-07-23T07:24:46Z Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor 2013-02 Kang, Eng Siew TK Electrical engineering. Electronics Nuclear engineering In recent development of nanoelectronic devices, strained silicon Metal- Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising structure for the future nanoscale device. Strained silicon is an attractive option due to the enhanced carrier mobility, high field velocity and carrier velocity overshoot. However, the aggressive geometry scaling has approached a limit where the classical mechanism is insufficient to clarify the characteristics of nanoscale MOSFET accurately. Beyond the classical limit, quantum-mechanical model becomes necessary to provide thorough assessment of the device performance. This research describes the modeling of nanoscale strained silicon MOSFET taking into account the critical quantum mechanical effects in terms of energy quantization and carrier charge distribution. Technology-Computer-Aided-Design (TCAD) simulations that apply the classical mechanisms are conducted to allow comparison with the developed models. It is shown that quantum mechanical effects become more dominant at channel length below 60nm. Significant discrepancy of threshold voltage as high as 90mV is found particularly in short channel regimes. The analytical model was also extended to the advanced structure of dual channel that provides higher electron and hole mobility compared to strained silicon MOSFET. The models were subsequently compared to the TCAD simulation results using a similar set of parameters as well as to the existing data from other literatures. Excellent agreements validate the models based on the physics of the quantum mechanical effects. In addition, the current-voltage model incorporating the quantum mechanical correction was also developed. The role of quantum capacitance over current drive in the channel was discussed. The developed models successfully replicate experimental data with proper physical explanation. 2013-02 Thesis http://eprints.utm.my/id/eprint/33828/ http://eprints.utm.my/id/eprint/33828/5/KangEngSiewPFKE2013.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:69837?site_name=Restricted Repository phd doctoral Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Kang, Eng Siew Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
description	In recent development of nanoelectronic devices, strained silicon Metal- Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a promising structure for the future nanoscale device. Strained silicon is an attractive option due to the enhanced carrier mobility, high field velocity and carrier velocity overshoot. However, the aggressive geometry scaling has approached a limit where the classical mechanism is insufficient to clarify the characteristics of nanoscale MOSFET accurately. Beyond the classical limit, quantum-mechanical model becomes necessary to provide thorough assessment of the device performance. This research describes the modeling of nanoscale strained silicon MOSFET taking into account the critical quantum mechanical effects in terms of energy quantization and carrier charge distribution. Technology-Computer-Aided-Design (TCAD) simulations that apply the classical mechanisms are conducted to allow comparison with the developed models. It is shown that quantum mechanical effects become more dominant at channel length below 60nm. Significant discrepancy of threshold voltage as high as 90mV is found particularly in short channel regimes. The analytical model was also extended to the advanced structure of dual channel that provides higher electron and hole mobility compared to strained silicon MOSFET. The models were subsequently compared to the TCAD simulation results using a similar set of parameters as well as to the existing data from other literatures. Excellent agreements validate the models based on the physics of the quantum mechanical effects. In addition, the current-voltage model incorporating the quantum mechanical correction was also developed. The role of quantum capacitance over current drive in the channel was discussed. The developed models successfully replicate experimental data with proper physical explanation.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Kang, Eng Siew
author_facet	Kang, Eng Siew
author_sort	Kang, Eng Siew
title	Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
title_short	Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
title_full	Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
title_fullStr	Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
title_full_unstemmed	Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
title_sort	quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2013
url	http://eprints.utm.my/id/eprint/33828/5/KangEngSiewPFKE2013.pdf
_version_	1747816195099197440

Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor

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