Modeling and simulation of bilayer graphene nanoribbon field effect transistor
The unique structure and electronic properties of Bilayer Graphene Nanoribbon (BLG) such as long mean free path, ballistic transport and symmetrical band structure, promise a new device application in the future. Improving the modeling of BLG Field Effect Transistor (FET) devices, based on the quant...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2012
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| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/36985/1/SeyedMahdiMousaviMFKE2012.pdf |
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