Gate oxide short (gos) defect modeling based on 32 nm CMOS process
Among the wide set of possible failure mechanisms in IC?s, Gate Oxide Short (GOS) defect is and has been a dominant mechanism failure for CMOS IC?s. It is difficult to detect the existence of GOS as it only causes marginal degradation in circuit?s performance due to small leakage current. If GOS occ...
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة |
| منشور في: |
2014
|
| الموضوعات: | |
| الوسوم: |
إضافة وسم
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|