APA引文

Alawey, S. Z. (2014). Gate oxide short (gos) defect modeling based on 32 nm CMOS process.

Chicago Style (17th ed.) Citation

Alawey, Sahar Z. Gate Oxide Short (gos) Defect Modeling Based on 32 Nm CMOS Process. 2014.

MLA引文

Alawey, Sahar Z. Gate Oxide Short (gos) Defect Modeling Based on 32 Nm CMOS Process. 2014.

警告：这些引文格式不一定是100％准确.