The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires

Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning...

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Bibliographic Details
Main Author: Nor Helmi, Nor Hamizah
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf
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