The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2014
|
| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|