The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires

Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning...

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Main Author:	Nor Helmi, Nor Hamizah
Format:	Thesis
Language:	English
Published:	2014
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf
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spelling	my-utm-ep.534512020-07-15T02:30:20Z The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires 2014-12 Nor Helmi, Nor Hamizah QC Physics Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The results showed that the growth of the InGaP wires depend strongly on the growth temperatures and substrate orientations. At low temperature of 380°C, wires grown on GaAs substrates were almost cylinderlike, while with increasing temperatures ranging from 410-500°C, the reversetapering phenomenon occurred producing microphone-like InGaP nanowires. With increasing temperature from 380-500°C, Au alloy-seed particle or the head part of the InGaP nanowires were also observed to be thicker in diameter (85-452 nm) than the body part (49.2-224.3 nm), which had been proven by the chemical compositions percentage in EDX analysis. Wires grown on GaAs (100) substrate were less than number of wires on GaAs (111) B substrate although wires on both substrates are basically grown on random directions. Twin boundaries crystal defects have been detected on some of the InGaP nanowires structures from TEM analysis. Such defects are not good and should be avoided to prevent further problem when being incorporated into potential devices. The crystal structure for all samples of InGaP wires is zinc blende (ZB), the lattice spacing (d) of InGaP wires is 3.342A, and the lattice parameter (a) is 5.788A. 2014-12 Thesis http://eprints.utm.my/id/eprint/53451/ http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:85311 masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Nor Helmi, Nor Hamizah The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
description	Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The results showed that the growth of the InGaP wires depend strongly on the growth temperatures and substrate orientations. At low temperature of 380°C, wires grown on GaAs substrates were almost cylinderlike, while with increasing temperatures ranging from 410-500°C, the reversetapering phenomenon occurred producing microphone-like InGaP nanowires. With increasing temperature from 380-500°C, Au alloy-seed particle or the head part of the InGaP nanowires were also observed to be thicker in diameter (85-452 nm) than the body part (49.2-224.3 nm), which had been proven by the chemical compositions percentage in EDX analysis. Wires grown on GaAs (100) substrate were less than number of wires on GaAs (111) B substrate although wires on both substrates are basically grown on random directions. Twin boundaries crystal defects have been detected on some of the InGaP nanowires structures from TEM analysis. Such defects are not good and should be avoided to prevent further problem when being incorporated into potential devices. The crystal structure for all samples of InGaP wires is zinc blende (ZB), the lattice spacing (d) of InGaP wires is 3.342A, and the lattice parameter (a) is 5.788A.
format	Thesis
qualification_level	Master's degree
author	Nor Helmi, Nor Hamizah
author_facet	Nor Helmi, Nor Hamizah
author_sort	Nor Helmi, Nor Hamizah
title	The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
title_short	The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
title_full	The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
title_fullStr	The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
title_full_unstemmed	The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
title_sort	effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2014
url	http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf
_version_	1747817558466101248

The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires

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