The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires
Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning...
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| 格式: | Thesis |
| 语言: | English |
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2014
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| 在线阅读: | http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf |
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