The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires

The effect of growth temperatures and substrate orientations of indium gallium phosphide quantum wires

Indium gallium phosphide (InGaP) nanowires were grown on gallium arsenide (GaAs) substrate by using metal-organic chemical vapour deposition (MOCVD) via vapour-liquid-solid (VLS) technique. The grown InGaP wires were characterized by using scanning electron microscopy (SEM), field emission scanning...

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书目详细资料
主要作者:	Nor Helmi, Nor Hamizah
格式:	Thesis
语言:	English
出版:	2014
主题:	QC Physics
在线阅读:	http://eprints.utm.my/id/eprint/53451/25/NorHamizahNorHelmiMFS2014.pdf
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