Enhancing SRAM performance of common gate FinFET by using controllable independent double gate
This project is focus on the research and evaluation on the characteristic of independent controllable gate FinFET structure in static random access memory (SRAM) circuitry. BSIM-CMG model for common gate FinFET is chosen in this research. The independent controllable gate FinFET is constructed usin...
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主要作者: | |
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格式: | Thesis |
語言: | English |
出版: |
2015
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主題: | |
在線閱讀: | http://eprints.utm.my/id/eprint/53897/1/ChongChungKeongMFKE2015.pdf |
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