Enhancing SRAM performance of common gate FinFET by using controllable independent double gate
This project is focus on the research and evaluation on the characteristic of independent controllable gate FinFET structure in static random access memory (SRAM) circuitry. BSIM-CMG model for common gate FinFET is chosen in this research. The independent controllable gate FinFET is constructed usin...
Saved in:
主要作者: | |
---|---|
格式: | Thesis |
语言: | English |
出版: |
2015
|
主题: | |
在线阅读: | http://eprints.utm.my/id/eprint/53897/1/ChongChungKeongMFKE2015.pdf |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|