Electrochemically deposited germanium on silicon and its crystallization by rapid melting growth

It is well known that continuous miniaturization of transistors tends to create several problems such as current leakage, short channel effect, etc. Therefore, introduction of new channel material with higher carrier mobilities such as Germanium (Ge) is suggested to overcome this physical limitation...

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Bibliographic Details
Main Author: Zainal Abidin, Mastura Shafinaz
Format: Thesis
Language:English
Published: 2014
Subjects:
Online Access:http://eprints.utm.my/id/eprint/78192/1/MasturaShafinazZainalPFKE2014.pdf
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