Study on threshold voltage shifts and reliability in PFETs by high-voltage on-state and off-state stress

In recent decades, electronics have made much progress thanks to the scaling of silicon complementary metal-oxide-semiconductor (CMOS) very-large-scale integration (VLSI). Now, dimensions of state-of-the-art metal-oxide-semiconductor field effect transistors (MOSFETs) are as small as tens of nanomet...

Full description

Saved in:
Bibliographic Details
Main Author: Alias, Nurul Ezaila
Format: Thesis
Published: 2013
Online Access:
Tags: Add Tag
No Tags, Be the first to tag this record!