Study on threshold voltage shifts and reliability in PFETs by high-voltage on-state and off-state stress
In recent decades, electronics have made much progress thanks to the scaling of silicon complementary metal-oxide-semiconductor (CMOS) very-large-scale integration (VLSI). Now, dimensions of state-of-the-art metal-oxide-semiconductor field effect transistors (MOSFETs) are as small as tens of nanomet...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2013
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| 在线阅读: | http://eprints.utm.my/id/eprint/78380/1/NurulEzailaAliasPFS2013.pdf |
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