Modeling and analysis of cylindrical gate-all around silicon nanowire FET including BOHM quantum potential model

Modeling and analysis of cylindrical gate-all around silicon nanowire FET including BOHM quantum potential model

According to Moores’s Law, the number of transistors per square inch on integrated circuits are doubled every year. Now, the transistors size has been scaled down to 15nm. The smaller the transistors size gives more space for transistors to be added in system on chip (SoC) thus will provide a lot of...

Saved in:

书目详细资料
主要作者:	Abd. Razak, Muhammad A’tif
格式:	Thesis
语言:	English
出版:	2018
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/78859/1/MuhammadAtifAbdRazakMFKE2018.pdf
标签:	添加标签没有标签, 成为第一个标记此记录!

相似书籍

Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects
由: Abd. Hamid, Fatimah Khairiah
出版: (2020)

Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell
由: Hamzah, Muhammad Afiq Nurudin
出版: (2018)

Parameter variations of 20NM GAAS junctionless-gate-all-around field-effect transistor with quantum mechanical effects
由: Mohamad Rasol, Muhammad Faidzal
出版: (2021)

A comparison of electrical performance analysis between nanoscale double-gate and gate-all-around nanowire mosfet
由: Kosmani, Nor Fareza
出版: (2020)

Comparative study of silicon nanowire fet-simulation and experimental /
由: Yazeer, Mohamed Jameel
出版: (2016)

Variable oxide thickness optimization and reliability analysis of Gate-All-Around floating gate for flash memory cell
由: A. Hamid, Farah
出版: (2020)

Enhancing SRAM performance of common gate FinFET by using controllable independent double gate
由: Chong, Chung Keong
出版: (2015)

P-type silicon nanowire transistor modeling and simulation
由: Fallahpour, Amir Hossein
出版: (2009)

Design And Characterization Of Silicon Nanowire Transistor And Logic Nanowire Inverter Circuits
由: Naif, Yasir Hashim
出版: (2013)

Quantum computing modelling on field programmable gate array based on state vector and heisenberg models
由: Lee, Yee Hui
出版: (2017)

Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
由: Chin, Huei Chaeng
出版: (2015)

Silicon nanowire arrays for thermoelectric power harvesting
由: Abdul Tahrim, 'Aqilah
出版: (2018)

Fabrication and simulation of lithographically defined junctionless lateral gate silicon nanowire transistors
由: Larki, Farhad
出版: (2012)

Electrical and temperature characterisation of silicon and germanium nanowire transistors based on channel dimensions
由: Hani Taha, Abd Assamad Al Ariqi
出版: (2020)

Arithmetic logic unit design for silicon nanowire field-effect transistors logic
由: Mohd. Munir Zahari, Nor Hafizah
出版: (2015)

Optimization of process parameter variation in double-gate FinFET model using various statistical methods
由: Roslan, Ameer Farhan
出版: (2022)

Optimization of n-channel silicon nanowire field effect transistor using Taguchi method
由: Wahab, Nurul Eryana
出版: (2018)

Silicon nanowire field-effect transistor (SiNWFET) and its circuit level performance
由: Bahador, Siti Norazlin
出版: (2014)

Parallel unbalanced three-phase power flow analysis including distributed generation models
由: Syafii, Syafii
出版: (2011)

Electronic structures of silicon quantum dots as nanoclusters for single electron transistors
由: Lee, Jia Yen
出版: (2008)

Neuro-network modelling and control of flexibly mounted cylindrical riser
由: Hor, Win Han
出版: (2015)

Reliability analysis of junctionless fin field effect transistor (JL-FinFET)
由: Hamzah, Muhammad Naziiruddin
出版: (2022)

Performance analysis of 22NM FinFET-based 8T SRAM cell
由: Hasan Baseri, Nur Hasnifa
出版: (2018)

Carbon nanotube and silicon nanowire nanoscale field effect transistor modeling
由: Ahmadi, Mohammad Taghi
出版: (2010)

Study of time-dependent dielectric breakdown (TDDB) in 15MM junctionless FinFET
由: Chng, Sze Lyn
出版: (2022)

Quantum mechanical effects on the performance of strained silicon metal-oxide-semiconductor field-effect transistor
由: Kang, Eng Siew
出版: (2013)

Carbothermal synthesis of silicon oxide nanowires /
由: Nurul Aimi Zakaria
出版: (2012)

Vibrations of cylindrical shells /
由: Loy, Chee Tong
出版: (1996)

Synthesis, characterization and modelling of nickel nanowires synthesized via template-assisted electrodeposition
由: Nurhanis Sofiah, Abd Ghafar
出版: (2017)

Recognition of cylindrical features from 2.5D and 3D prismatic model
由: Wan Mohamad , Wan Zulfadli
出版: (2010)

Dam break flood inundation modelling for Klang gate dam
由: Zainal Abidin, Nurashikin
出版: (2015)

Impacts of ultrathin biaxial strained silicon on ultimate drive velocity, effective gate capacitance and threshold voltage
由: Yau , Wei Heong
出版: (2010)

Electrical label-free sensing of cardiac troponin biomarker: FET-based integration with substrate-gate coupling

Integrated solid-state electrode for extended-gate FET pH sensor / Aimi Bazilah Rosli
由: Rosli, Aimi Bazilah
出版: (2019)

Stress analysis of cylindrical axisymmetric water tanks
由: Saw, Han Woei
出版: (2001)

Design of 200V n-type superjunction lateral insulated gate bipolar transistor on partial silicon on insulator
由: Kho, Elizabeth Ching Tee
出版: (2014)

A simulation study of photoluminescence silicon nanowires
由: Isiyaku, Aliyu Kabiru
出版: (2014)

Derivations of friedmann and modified friedmann equations using de Broglie-Bohm interpretation /
由: Ch'ng, Han Siong

Physical modeling of local scour around wide and skewed piers
由: Ahmad, Nordila
出版: (2015)

Effect Of Tetramethylammonium Hydroxide (TMAH) Etchant On The Formation Of Silicon Nanowires Transistor Patterned By Atomic Force Microscopy (AFM) Lithography
由: Lew, Kam Chung
出版: (2011)

Services hosted by the Perpustakaan Sultan Abdul Samad, Universiti Putra Malaysia with Cooperation MySyL Group