Performance analysis of 22NM FinFET-based 8T SRAM cell

Performance analysis of 22NM FinFET-based 8T SRAM cell

As CMOS devices are approaching nanometer regime, there are a lot of consequences found in scaling down CMOS devices such as short channel effects and process variations which affect the reliability and performance of the devices. Researchers have found that FinFET is one of the outstanding nominee...

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書目詳細資料
主要作者:	Hasan Baseri, Nur Hasnifa
格式:	Thesis
語言:	English
出版:	2018
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/78938/1/NurHasnifaHasanMFKE2018.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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