Performance analysis of 22NM FinFET-based 8T SRAM cell
As CMOS devices are approaching nanometer regime, there are a lot of consequences found in scaling down CMOS devices such as short channel effects and process variations which affect the reliability and performance of the devices. Researchers have found that FinFET is one of the outstanding nominee...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2018
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/78938/1/NurHasnifaHasanMFKE2018.pdf |
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