Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell

Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell

Due to high gate electrostatic control and introduction of punch and plug process technology, the gate-all-around (GAA) transistor is very promising in, and apparently has been utilized for, flash memory applications. However, GAA Floating Gate (GAA-FG) memory cell still requires high programming vo...

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書目詳細資料
主要作者:	Hamzah, Muhammad Afiq Nurudin
格式:	Thesis
語言:	English
出版:	2018
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/79404/1/MuhammadAfiqNurudinPFKE2018.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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