Charge-based compact model of gate-all-around floating gate nanowire with variable oxide thickness for flash memory cell
Due to high gate electrostatic control and introduction of punch and plug process technology, the gate-all-around (GAA) transistor is very promising in, and apparently has been utilized for, flash memory applications. However, GAA Floating Gate (GAA-FG) memory cell still requires high programming vo...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2018
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/79404/1/MuhammadAfiqNurudinPFKE2018.pdf |
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