The effects of annealing on microstructural changes for aluminium nitride epitaxial grown on sapphire by transmission electron microscopy
The performance of semiconductor devices depends strongly upon the microstructure of the materials. Therefore the microstructural control is intrinsically important for fabrication of high performance devices. In this research, the microstructures have been analysed in detail and the mechanisms of m...
Saved in:
主要作者: | Kaur, Jesbains |
---|---|
格式: | Thesis |
語言: | English |
出版: |
2017
|
主題: | |
在線閱讀: | http://eprints.utm.my/id/eprint/92232/1/JesbainsKaurPMJIIT2017.pdf.pdf |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
High quality single-crystalline aluminum nitride grown using pulsed atomic-layer epitaxy technique by MOCVD on sapphire substrate /
由: Mohd Nazri Abd Rahman
出版: (2021) -
Transmission electron microscopy of microstructures produced in processing of silikon semiconductor devices /
由: Jia, Yumin
出版: (2001) -
Study of III-nitrides heterostructures grown by plasma-assisted molecular beam epitaxy (PAMBE)
由: Chin, Che Woei
出版: (2009) -
Electron microscopy studies of insoluble inorganic materials grown in gels
由: Jariah Abdullah
出版: (1988) -
Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /
由: Mohd Afiq Anuar
出版: (2020)