Performance evaluation of finfet silicide based contact through electrical simulation
Continues scaling of device dimension allows the complex integration of increasing number of transistors in a single chip possible. As the semiconductor industry move according to Moore’s law, the scaling down of field effect transistor (FET) has reached less than 10 nm. The conventional planar FET...
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| 主要作者: | |
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| 格式: | Thesis |
| 語言: | English |
| 出版: |
2021
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| 主題: | |
| 在線閱讀: | http://eprints.utm.my/id/eprint/96835/1/AdliaAiniMSKE2021.pdf.pdf |
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