Explicit charge-based model for strained-silicon gate-all-around mosfet including quantum and short channel effects
In the recent development of advanced nanoelectronic devices, strain application on silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key factor towards the improvement of device performance. Strainedsilicon is preferred due to less impact of the short chann...
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| Main Author: | |
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| Format: | Thesis |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/99521/1/FatimahKhairiahAbdPSKE2020.pdf.pdf |
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