Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /

Simulation framework of NBTI degradation in nano-scale p-mosfets from the perspective of hydrogen and non-hydrogen transport formalism /

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書目詳細資料
主要作者:	Hanim Hussin (Author)
格式:	Thesis 圖書
語言:	English
出版:	2015.
主題:	Microelectronics > Materials > Testing. Metal oxide semiconductor field-effect transistors > Testing. Integrated circuits > Defects.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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