Study of MBE grown AIInGaAs/AIGaAs quantum wells and their application in semiconductor lasers /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| التنسيق: | أطروحة كتاب |
| اللغة: | English |
| منشور في: |
1997.
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| الموضوعات: | |
| الوسوم: |
إضافة وسم
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| LEADER | 00876cam a2200253 a 4500 | ||
|---|---|---|---|
| 001 | u425036 | ||
| 003 | SIRSI | ||
| 008 | 980609s1997 si v 00 1 eng m | ||
| 035 | |a ACF-2258 | ||
| 040 | |a UMM | ||
| 090 | |a TK7871.15 |b G3Zha | ||
| 100 | 1 | 0 | |a Zhang, Zhihe |
| 245 | 1 | 0 | |a Study of MBE grown AIInGaAs/AIGaAs quantum wells and their application in semiconductor lasers / |c by Zhang Zhihe. |
| 260 | |c 1997. | ||
| 300 | |a xiv, 111 leaves ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.) -- National University of Singapore, 1997. | ||
| 504 | |a Bibliography: leaves 93-97. | ||
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 650 | 0 | |a Molecular beam epitaxy. | |
| 650 | 0 | |a Quantum wells. | |
| 650 | 0 | |a Semiconductor lasers. | |
| 948 | |a 09/06/1998 |b 17/08/1998 | ||
| 596 | |a 1 | ||
| 999 | |a TK7871.15 G3ZHA |w LC |c 1 |i A507918347 |d 25/8/2011 |e 25/8/2011 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 25/8/1998 | ||