Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /

Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /

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書目詳細資料
主要作者:	Chua, Hwee Ngoh
格式:	Thesis 圖書
語言:	English
出版:	2000.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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