Nickel silicide integration issues in SI deep sub-micron technologies /

مواد مشابهة

• Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /
  بواسطة: Lim, Chong Wee
  منشور في: (1998)
• Laser-induced formation of titanium silicides and its applications in deep sub-micron technology /
  بواسطة: Chen, Shaoyin
  منشور في: (2001)
• Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology /
  بواسطة: Chua, Hwee Ngoh
  منشور في: (2000)
• Integration of self-aligned silicide (salicide) process for sub-0.25 [mu]m CMOS technology /
  بواسطة: Ho, Chaw Sing
  منشور في: (2002)
• Design and fabrication of low power differential low noise amplifier for WLAN application in deep sub-micron standard CMOS technology /
  بواسطة: Maizan Muhamad
  منشور في: (2019)