Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /

Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /

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Bibliographic Details
Main Author: Yong, Yoong Hooi
Format: Thesis Book
Language:English
Published: 2006.
Subjects:
Metal oxide semiconductors, Complementary.
Gate array circuits.
Silicon oxide films > Testing.
Dielectrics > Testing.
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Description
Physical Description:164 leaves : ill. ; 30 cm.
Bibliography:Bibliography: leaves 161-164.

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