Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2006.
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| 001 | u736629 | ||
| 003 | SIRSI | ||
| 005 | 200704111448 | ||
| 008 | 070411s2006 my a t 000 0 eng m | ||
| 040 | |a UMM |d UMJ | ||
| 090 | |a TJ7 |b UM 2006 Yon | ||
| 097 | |a TJ7 |b UM 2006 Yon | ||
| 100 | 1 | |a Yong, Yoong Hooi. | |
| 245 | 1 | 0 | |a Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology / |c Yong Yoong Hooi. |
| 260 | |c 2006. | ||
| 300 | |a 164 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Eng.Sc.) -- Jabatan Kejuruteraan Mekanik, Fakulti Kejuruteraan, Universiti Malaya, 2006. | ||
| 504 | |a Bibliography: leaves 161-164. | ||
| 650 | 0 | |a Metal oxide semiconductors, Complementary. | |
| 650 | 0 | |a Gate array circuits. | |
| 650 | 0 | |a Silicon oxide films |x Testing. | |
| 650 | 0 | |a Dielectrics |x Testing. | |
| 710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Mekanik. | |
| 596 | |a 1 7 | ||
| 900 | |a SJMK | ||
| 999 | |a TJ7 UM 2006 YON |w LC |c 1 |i A512900337 |d 27/5/2015 |e 27/5/2015 |f 6/12/2007 |g 1 |l STACKS |m P01UTAMA |n 1 |r Y |s Y |t TESIS |u 6/12/2007 | ||
| 999 | |a TJ7 UM 2006 YON |w LC |c 1 |i A513003546 |d 18/8/2008 |f 18/8/2008 |g 2 |l STACKS |m P07JURUTER |r Y |s Y |t TESIS |u 14/8/2008 | ||