Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /
Saved in:
Main Author: | Yong, Yoong Hooi |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
2006.
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Multi-directional matrix converter for low power application using field-programmable gate array
by: Toosi, Saman
Published: (2015) -
Real time plate recognition for motorcycle using field programmable gate array
by: Mat Nong, Mohd Ali
Published: (2019) -
Integration of self-aligned silicide (salicide) process for sub-0.25 [mu]m CMOS technology /
by: Ho, Chaw Sing
Published: (2002) - Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS
-
Device Characterization of 0.8-µm CMOS Technology
by: Kooh, Roy Jinn Chye
Published: (2000)